Art
J-GLOBAL ID：200902012178853619   Reference number：91A0232956

A Zn predeposition technique applied to GaAs/AlGaAs heterobipolar transistors.

Znの事前蒸着法のGaAs/AlGaAs系ヘテロバイポーラトランジスタへの利用
Author (3)：
SHIMAMOTO Y

About SHIMAMOTO Y

(Matsushita Electronics Corp., Osaka, JPN)

About Matsushita Electronics Corp., Osaka, JPN

, 
ITAKURA K

About ITAKURA K

(Matsushita Electronics Corp., Osaka, JPN)

About Matsushita Electronics Corp., Osaka, JPN

, 
UEDA D

About UEDA D

(Matsushita Electronics Corp., Osaka, JPN)

About Matsushita Electronics Corp., Osaka, JPN


Material：
Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)

About Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures


Volume： 8  Issue： 6  Page： 1260-1263  Publication year： Nov. 1990 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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gallium arsenide

About gallium arsenide

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
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急速熱処理

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,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

About Transistors

,  半導体-半導体接触【’81~’92】 
(BM03072N)

About 半導体-半導体接触【’81~’92】

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
Zn

About Zn

, 
蒸着

About 蒸着

, 
GaAs

About GaAs

, 
AlGaAs

About AlGaAs


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