Art
J-GLOBAL ID：200902066210213905
Reference number：92A0167143
TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD).
TFT及び非常に低い圧力の化学蒸着(VLPCVD)により作製した多結晶シリコンの物理的特性
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=92A0167143©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=92A0167143&from=J-GLOBAL&jstjournalNo=G0520B") }}
Author (4)：
,
,
,
Material：
Volume：
30
Issue：
12B
Page：
3733-3740
Publication year：
Dec. 1991
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (2)：
JST classification
Category name(code) classified by JST.
金属-絶縁体-半導体構造【’81~’92】
, Transistors
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
Return to Previous Page
