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J-GLOBAL ID:200902100623759349   Reference number:01A0212524

Initial Stage of Hydrogen Etching of Si Surfaces Investigated by Infrared Reflection Absorption Spectroscopy.

赤外反射吸収分光法によって調べたSi表面の水素エッチングの初期段階
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Volume: 39  Issue: 12B  Page: 6985-6989  Publication year: Dec. 30, 2000 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Techniques for samples  ,  Infrared spectra,Raman scattering and Raman spectra of semiconductors 
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