Art
J-GLOBAL ID：200902100635961216
Reference number：99A0093149
Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane.
テトラエトキシシランを用いたSiO2膜におけるプラズマ支援化学気相蒸着の分解過程
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=99A0093149©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=99A0093149&from=J-GLOBAL&jstjournalNo=C0789B") }}
Author (2)：
,
Material：
Volume：
16
Issue：
6
Page：
3157-3163
Publication year：
Nov. 1998
JST Material Number：
C0789B
ISSN：
0734-2101
CODEN：
JVTAD6
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1)：
JST classification
Category name(code) classified by JST.
Oxide thin films
Substance index (1)：
Substance index
Chemical Substance indexed to the Article.
Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
Return to Previous Page
