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J-GLOBAL ID:200902108046800270   Reference number:01A0059371

Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region.

β-FeSi2活性領域のあるSiによる発光ダイオードからの室温1.6μmエレクトロルミネセンス
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Volume: 39  Issue: 10B  Page: L1013-L1015  Publication year: Oct. 15, 2000 
JST Material Number: F0599B  ISSN: 0021-4922  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Luminescence of semiconductors  ,  Light emitting devices 
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