Art

J-GLOBAL ID：200902108429203276   Reference number：99A0391965

Microelectronic Test Structures. A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs.

n-MOSFETにおけるホットキャリア誘起光電子放出に関する研究

Author (5)： MATSUDA T (Toyama Prefectural Univ., Toyama-ken, JPN) ,  MATSUYAMA N (Toyama Prefectural Univ., Toyama-ken, JPN) ,  HOSOI K (Toyama Prefectural Univ., Toyama-ken, JPN) ,  KAMEDA E (Toyama National Coll. Technol., Toyama-ken, JPN) ,  OHZONE T (Toyama Prefectural Univ., Toyama-ken, JPN)
Material： IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)  (IEICE Trans Electron (Inst Electron Inf Commun Eng))
Volume： E82-C  Issue： 4  Page： 593-601  Publication year： Apr. 25, 1999 
JST Material Number： L1370A  ISSN： 0916-8524  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,...

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JST classification (1)： Transistors  (NC03070N)

Reference (19)：

• TAKEDA, E. An empirical model for device degradation due to hot-carrier injection. IEEE Electron Device Lett. 1983, EDL-4, 111
• TAM, S. Spatially resolved observation of visible-light emissoin from Si MOS-FETs. IEEE Electron Device Lett. 1983, EDL-4, 386-388
• TAM, S. Hot-electron-induced photon and photocarrier generation in silicon MOSFETs. IEEE Trans. Electron Devices. 1984, ED-31, 1264-1272
• KOLZER, J. Quantitative emission microscopy. J. Appl. Phys. 1992, 71, R23-R41
• TORIUMI, A. A study of photon emission from n-channel MOSFETs. IEEE Trans. Electron Devices. 1987, ED-34, 1501-1508

Terms in the title (5)： MOSFET ,  ホットキャリア ,  誘起 ,  光電子放出 ,  研究