Investigations on High-Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers.

NAKASHIMA S; KATAYAMA T; MIYAMURA Y; MATSUZAKI A; KATAOKA M; EBI D; IMAI M; IZUMI K; OHWADA N

Art

J-GLOBAL ID：200902108663590011 Reference number：96A0192579

Investigations on High-Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers.

SIMOXウエハの最表面シリコンの上部及び底部界面における高温熱酸化過程

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Material：
Volume： 143 Issue： 1 Page： 244-251 Publication year： Jan. 1996
JST Material Number： C0285A ISSN： 1945-7111 CODEN： JESOAN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices , Oxide thin films

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