Effects of gallium doping on the properties of amorphous-SiC:H films prepared by magnetron cosputtering.

SAITO N; INUI Y; YAMAGUCHI T; NAKAAKI I

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J-GLOBAL ID：200902109284335230 Reference number：98A0329791

Effects of gallium doping on the properties of amorphous-SiC:H films prepared by magnetron cosputtering.

マグネトロン同時スパタリングで作製した非晶質SiC:H膜の性質へのガリウムドーピングの効果

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Material：
Volume： 83 Issue： 4 Page： 2067-2071 Publication year： Feb. 15, 1998
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Electric conduction in amorphous and liquid semiconductors

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