Thermal stability of W, WSi<sub>x</sub>, and Ti/Al ohmic contacts to InGaN, InN, and InAlN.

VARTULI C B; PEARTON S J; ABERNATHY C R; MACKENZIE J D; SHUL R J; ZOLPER J C; LOVEJOY M L; BACA A G; HAGEROTT-CRAWFORD M

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J-GLOBAL ID：200902110230017966 Reference number：97A0194244

Thermal stability of W, WSi_x, and Ti/Al ohmic contacts to InGaN, InN, and InAlN.

InGaN,InN及びInAlN上のW,WSi_x及びTi/AlのOhm接触の熱安定性

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Volume： 14 Issue： 6 Page： 3520-3522 Publication year： Nov. 1996
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-metal contacts , Diffusion in solids in general

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Thermal stability of W, WSix, and Ti/Al ohmic contacts to InGaN, InN, and InAlN.

Thermal stability of W, WSi_x, and Ti/Al ohmic contacts to InGaN, InN, and InAlN.