Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO<sub>2</sub> films.

UNO S; ISHIDA A; DEGUCHI K; KAMAKURA Y; TANIGUCHI K

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J-GLOBAL ID：200902114968725995 Reference number：01A0743392

Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO₂ films.

極めて薄いSiO₂膜における降伏前漏れ電流のキャリア分離測定

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Volume： 89 Issue： 12 Page： 8336-8338 Publication year： Jun. 15, 2001
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures

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Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO2 films.

Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO₂ films.