Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals.

KATO M; YOSHIDA T; IKEDA Y; KITAGAWARA Y

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J-GLOBAL ID：200902116638642450 Reference number：97A0086699

Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals.

Czochralski成長後未処理のSi結晶中の“IR散乱欠陥”の透過型電子顕微鏡による観察

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Material：
Volume： 35 Issue： 11 Page： 5597-5601 Publication year： Nov. 1996
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Lattice defects in semiconductors

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YAMAGISHI, H. Semicond.Sci.& Technol. 1992, 7, A135
RYUTA, J. Jpn.J.Appl.Phys. 1990, 29, L1947
GALL, P. Defect Control in Semiconductors. 1990, 255
UMENO, S. Jpn.J.Appl.Phys. 1993, 32, L699
ITSUMI, M. Jpn.J.Appl.Phys. 1996, 35, 812

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