Initial oxidation phenomena of heavily phosphorus-doped silicon in dry oxygen.

KAMIURA Y; HASEGAWA K; SANO Y; MIZOKAWA Y; KAWAMOTO K

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J-GLOBAL ID：200902118440740084 Reference number：03A0069733

Initial oxidation phenomena of heavily phosphorus-doped silicon in dry oxygen.

高濃度りんドープシリコンの乾燥酸素中での初期酸化現象

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Author (5)： , , , ,
Material：
Volume： 20 Issue： 6 Page： 2187-2191 Publication year： Nov. 2002
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Other noncatalytic reactions , Oxide thin films

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