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J-GLOBAL ID:200902120668539219   Reference number:02A0643953

Materials-Related Issues for Cu Interconnects Used in Ultra High Speed Large Scaled Integrated Si Devices. Effect of Annealing Atmosphere on Void Formation in Copper Interconnects.

銅相互接続におけるボイド形成に及ぼす焼なまし雰囲気の影響
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Volume: 43  Issue:Page: 1624-1628  Publication year: Jul. 20, 2002 
JST Material Number: G0668A  ISSN: 1345-9678  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Manufacturing technology of solid-state devices 
Reference (18):
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  • 2) E. Arzt, O. Kraft, W. D. Nix and J. E. Sanchez, Jr.: J. Appl. Phys. 76 (1994) 1563–1571.
  • 3) E. Castano, J. Maiz, P. Flinn and M. Madden: Appl. Phys. Lett. 59 (1991) 129–131.
  • 4) I. A. Blech and E. S. Meieran: Appl. Phys. Lett. 11 (1967) 263–266.
  • 5) H. Okabayashi: Mat. Res. Soc. Symp. Proc., 337 (1994) 503–513.
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