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J-GLOBAL ID：200902121000775600
Reference number：01A0053579
Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode.
陽極酸化薄膜多孔質シリコンダイオードからの高く安定した量子効率と低しきい値電圧を示すエレクトロルミネセンス
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Author (2)：
,
Material：
Volume：
88
Issue：
7
Page：
4319-4324
Publication year：
Oct. 01, 2000
JST Material Number：
C0266A
ISSN：
0021-8979
CODEN：
JAPIAU
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Luminescence of semiconductors
, Light emitting devices
Terms in the title (7)：
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