Preliminary Study of a Novel Scanning Charge-Pumping Method Using Extra Gates for SOI Wafer Inspection.

YOSHIDA H; TAKAMI T; UCHIHASHI T; KISHINO S; NARUOKA H; MASHIKO Y

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J-GLOBAL ID：200902125729306044 Reference number：02A0862783

Preliminary Study of a Novel Scanning Charge-Pumping Method Using Extra Gates for SOI Wafer Inspection.

SOIウエハ検査のための付加ゲートを用いた新規な走査電荷ポンピング法の予備検討

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Material：
Volume： 23 Issue： 10 Page： 630-632 Publication year： Oct. 2002
JST Material Number： B0344B ISSN： 0741-3106 CODEN： EDLEDZ Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Measurement,testing and reliability of solid-state devices

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