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J-GLOBAL ID：200902126862705314   Reference number：98A0037141

Controlling Fluorine Concentration of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics.

低誘電率層間絶縁体用のふっ化非晶質炭素薄膜のふっ素濃度の制御

Author (2)： ENDO K (NEC Corp., Ibaraki, JPN) ,  TATSUMI T (NEC Corp., Ibaraki, JPN)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 36  Issue： 11B  Page： L1531-L1533  Publication year： Nov. 15, 1997 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： dielectric thin film ,...
Semi thesaurus term： 層間絶縁膜

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JST classification (2)： Thin films of other inorganic compounds  (BK14060A) ,  Manufacturing technology of solid-state devices  (NC03030V)

Reference (6)：

• 1) K. Endo and T. Tatsumi: J. Appl. Phys. 78 (1995) 1370
• 2) M. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai and T. Horiuchi: IEDM Tech. Dig. (1996) p. 369.
• 3) S. Takeishi, H. Kudo, R. Shinohara, M. Hoshino, S. Fukuyama, J. Yamaguchi and Y. Yamada: Proc. DUMIC Conf. (1996) p. 71.
• 4) K. Endo, T. Tatsumi, Y. Matsubara and T. Horiuchi: Ext. Abstr. Fall Meeting, Boston, 1996, Material Research Society, H4.3.
• 5) L. D. B. Kiss, J.-P. Nicolai, W. T. Conner and H. H. Sawin: J. Appl. Phys. 71 (1992) 3186

Terms in the title (5)： 低誘電率 ,  層間絶縁 ,  非晶質 ,  炭素薄膜 ,  ふっ素