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J-GLOBAL ID:200902129260208270   Reference number:00A0547265

Defect structure in selective area growth GaN pyramid on (111)Si substrate.

Si(111)基板上の選択領域成長GaNピラミッドにおける欠陥構造
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Volume: 76  Issue: 19  Page: 2701-2703  Publication year: May. 08, 2000 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Lattice defects in semiconductors  ,  Semiconductor thin films 
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