J-GLOBAL ID：200901054611813130
Update date: Aug. 24, 2024
Tanaka Shigeyasu
Tanaka Shigeyasu
Research field (4)：
Structural biochemistry
, Thin-film surfaces and interfaces
, Electronic devices and equipment
, Electric/electronic material engineering
Research keywords (4)：
電子デバイス・機器工学
, 電子・電気材料工学
, Electron Devices and Apparatus Engineering
, Electronic and Electric Materials Engineering
Research theme for competitive and other funds (23)：
2022 - 2025 細胞内微細構造のSEM反射電子像の高解像化のための画像処理法の開発
2018 - 2023 SEM像電位コントラストの原理解明と定量化手法の確立
2013 - 2017 Development of dopant concentration measuring technique for next generation semiconductor devices
2013 - 2015 Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices
2008 - 2010 Development of dopant concentration measurement technique for next-generation devices
2004 - 2008 Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substrate
2003 - 2005 反強磁性薄膜材料の電子波による研究
2002 - 2004 Development of a real time stereo phase microscope
2001 - 2003 Equipping a transmission electron microscope with a field emission electron gun.
2001 - 2003 SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATE
1999 - 2000 Improvement of Resolution of a Electron Microscope by Means of Correction of Spherical Aberration Using a Foil Lens
1997 - 1998 Research on a Structure Analysis of Materials with a Maximum Entropy Restoration of Electron Microscope Images.
1996 - 1997 Fundamental Study on magnetic-granular films with fine structures
1995 - 1996 Research on an Improvement of Resolution of Electron Microscope by Means of Maximum Entropy Image Restoration.
1995 - 1996 Fundamental Study on a High Brightness and High Resolution YAG Screen for Electron Microscopy
1995 - 1995 高品質な高分解能電顕像を得るための半導体試料の薄片化法の検討
1993 - 1995 Development of a high resolution scanning transmission electron microscope with a foil lens for correction of spherical aberration
1994 - 1994 高品質な高分解能電顕像を得るための半導体試料の薄片化法の検討
1993 - 1994 Fundamental study on spherical aberration correction of the objective lens of an electron microscope using a foil lens
高分解能電顕法による界面構造の解析
透過電子顕微鏡法による材料評価
High Resolution Electron Microscopy of Interface Structure
Characterization of Materials by Transmission Electron Microscopy
Okuno, Koji, Oshio, Takahide, Shibata, Naoki, Honda, Yoshio, Yamaguchi, Masahito, Tanaka, Shigeyasu, Amano, Hiroshi. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy. Physica Status Solidi C. 2013. 10. 3. 369-372
Shigeyasu Tanaka, Yoshio Honda, Norifumi Kameshiro, Ryuta Iwasaki, Nobuhiko Sawaki, Takayoshi Tanji. Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate. Japanese Journal of Applied Physics, Part 2: Letters. 2002. 41. 7 B. L846-L848
