Growth of GaN single crystals from a Na-Ga melt at 750°C and 5MPa of N<sub>2</sub>.

AOKI M; YAMANE H; SHIMADA M; SEKIGUCHI T; HANADA T; YAO T; SARAYAMA S; DISALVO F J

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J-GLOBAL ID：200902129426094740 Reference number：00A1061776

Growth of GaN single crystals from a Na-Ga melt at 750°C and 5MPa of N₂.

750°CのNa-Ga融液と5MPaの窒素からのGaN単結晶成長

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Author (8)： , , , , , , ,
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Volume： 218 Issue： 1 Page： 7-12 Publication year： Sep. 2000
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Crystal growth of semiconductors

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Growth of GaN single crystals from a Na-Ga melt at 750°C and 5MPa of N2.

Growth of GaN single crystals from a Na-Ga melt at 750°C and 5MPa of N₂.