Low temperature formation of microcrystalline silicon films using high-density SiH<sub>4</sub> microwave plasma.

SAKUMA Y; LIU H; SHIRAI H; MORIYA Y; UEYAMA H

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J-GLOBAL ID：200902130589717255 Reference number：01A0433744

Low temperature formation of microcrystalline silicon films using high-density SiH₄ microwave plasma.

高密度SiH₄マイクロ波プラズマを用いた微結晶シリコン薄膜の低温形成

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Material：
Volume： 386 Issue： 2 Page： 261-266 Publication year： May. 15, 2001
JST Material Number： B0899A ISSN： 0040-6090 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films , Photoconduction,photoelectromotive force

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Low temperature formation of microcrystalline silicon films using high-density SiH4 microwave plasma.

Low temperature formation of microcrystalline silicon films using high-density SiH₄ microwave plasma.