Art
J-GLOBAL ID：200902133102031476
Reference number：98A0247989
Si Field Emitter Arrays Fabricated by Anodization and Transfer Technique.
陽極酸化と転送法によるSi電界エミッタアレイの作製
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Author (3)：
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Material：
Volume：
36
Issue：
12B
Page：
7741-7744
Publication year：
Dec. 1997
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (3)：
JST classification
Category name(code) classified by JST.
Electron and ion sources
, Thermoionic emission and field emission
, Other solid-state devices
Reference (11)：
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1) C. A. Spindt: J. Appl. Phys. 39 (1968) 3504.
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2) K. Betsui: Tech. Dig. 4th Int. Vacuum Microelectronics Conf. (1991) p. 26.
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3) H. F. Gray and J. L. Show: Tech. Dig. Int. Electron Devices Meet. (IEEE, 1991) p. 221.
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4) M. Nakamoto, T. Ono, Y. Nakamura and K. Ichimura: Tech. Dig. 7th Int. Vacuum Microelectronics. Conf. (1994) p. 42.
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5) T. Asano and J. Yasuda: Jpn. J. Appl. Phys. 35 (1996) 6632
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Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
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