Leakage Current Mechanism of Amorphous and Polycrystalline Ta<sub>2</sub>O<sub>5</sub> Films Grown by Chemical Vapor Deposition.

AOYAMA T; SAIDA S; OKAYAMA Y; FUJISAKI M; IMAI K; ARIKADO T

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J-GLOBAL ID：200902133105423340 Reference number：96A0406511

Leakage Current Mechanism of Amorphous and Polycrystalline Ta₂O₅ Films Grown by Chemical Vapor Deposition.

化学蒸着法で成長させた非晶質および多結晶Ta₂O₅皮膜の漏洩電流機構

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Author (6)： , , , , ,
Material：
Volume： 143 Issue： 3 Page： 977-983 Publication year： Mar. 1996
JST Material Number： C0285A ISSN： 1945-7111 CODEN： JESOAN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Measurement,testing and reliability of solid-state devices , Bases,metal oxides

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Leakage Current Mechanism of Amorphous and Polycrystalline Ta2O5 Films Grown by Chemical Vapor Deposition.

Leakage Current Mechanism of Amorphous and Polycrystalline Ta₂O₅ Films Grown by Chemical Vapor Deposition.