Art
J-GLOBAL ID：200902135839839418   Reference number：99A0838291

1.17-μm Highly Strained GaInAs-GaAs Quantum-Well Laser.

波長1.17μmの高度に歪んだGaInAs-GaAs量子井戸レーザ
Author (5)：
SCHLENKER D

About SCHLENKER D

(Tokyo Inst. Technol., Yokohama, JPN)

About Tokyo Inst. Technol., Yokohama, JPN

, 
MIYAMOTO T

About MIYAMOTO T

(Tokyo Inst. Technol., Yokohama, JPN)

About Tokyo Inst. Technol., Yokohama, JPN

, 
CHEN Z

About CHEN Z

(Tokyo Inst. Technol., Yokohama, JPN)

About Tokyo Inst. Technol., Yokohama, JPN

, 
KOYAMA F

About KOYAMA F

(Tokyo Inst. Technol., Yokohama, JPN)

About Tokyo Inst. Technol., Yokohama, JPN

, 
IGA K

About IGA K

(Tokyo Inst. Technol., Yokohama, JPN)

About Tokyo Inst. Technol., Yokohama, JPN


Material：
IEEE Photonics Technology Letters  (IEEE Transactions Photonics Technology Letters)

About IEEE Photonics Technology Letters


Volume： 11  Issue： 8  Page： 946-948  Publication year： Aug. 1999 
JST Material Number： T0721A  ISSN： 1041-1135  CODEN： IPTLEL  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*quantum well laser

About quantum well laser

,...
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Thesaurus term/Semi thesaurus term
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crytical thickness

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,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor lasers 
(BD04070L)

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Terms in the title (4)：
Terms in the title
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波長

About 波長

, 
GaInAs

About GaInAs

, 
GaAs

About GaAs

, 
量子井戸レーザ

About 量子井戸レーザ


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