Art
J-GLOBAL ID：200902136379301402
Reference number：99A0497705
Preparation of Bi4Ti3O12 Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semicondutor Structure.
MOCVD法によるBi4Ti3O12薄膜の調製と,金属/強誘電体/絶縁体/半導体構造の電気特性
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=99A0497705©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=99A0497705&from=J-GLOBAL&jstjournalNo=G0520B") }}
Author (2)：
,
Material：
Volume：
38
Issue：
4B
Page：
2281-2284
Publication year：
Apr. 30, 1999
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (2)：
JST classification
Category name(code) classified by JST.
Oxide thin films
, Metal-insulator-semiconductor structures
Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
,
Return to Previous Page
