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J-GLOBAL ID:200902136559368947   Reference number:99A0420043

Impact of Nitridation Engineering on Microscopic SILC Characteristics of Sub-10-nm Tunnel Dielectrics.

サブ10nmトンネル絶縁膜の微視的SILC特性に対する窒化膜形成のエンジニアリング効果
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Volume: 1998  Page: 597-600  Publication year: 1998 
JST Material Number: C0829B  ISSN: 0163-1918  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors  ,  Manufacturing technology of solid-state devices  ,  Measurement,testing and reliability of solid-state devices 
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