High characteristic temperature (T<sub>0</sub>=243K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy.

OHNO Y; KANAMORI H; SHIMOMURA S; HIYAMIZU S

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J-GLOBAL ID：200902137656627228 Reference number：02A0597251

High characteristic temperature (T₀=243K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy.

分子ビームエピタクシーにより(775)B GaAs基板上に成長させた積層InGaAs量子細線レーザの高い特性温度(T₀=243K)

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Material：
Volume： 20 Issue： 3 Page： 1270-1273 Publication year： May. 2002
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers , Semiconductor thin films

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High characteristic temperature (T0=243K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy.

High characteristic temperature (T₀=243K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy.