Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-μm Design Rule.

MIYAKE H; YANAGISAWA H; SASAKI K; SHINKAI S; ABE Y

Art

J-GLOBAL ID：200902138852871168 Reference number：01A0733952

Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-μm Design Rule.

サブ0.25μm設計則に利用できるZrN/Zr二重層障壁薄膜を挿入した単一配向(111)Al被膜層を用いた接触系の作製

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Material：
Volume： 40 Issue： 6A Page： 4193-4194 Publication year： Jun. 15, 2001
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures

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