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J-GLOBAL ID：200902139367364718
Reference number：99A0609559
Analysis of Local Lattice Strain Around Oxygen Precipitates in Czochralski-Grown Silicon Wafers Using Convergent Beam Electron Diffraction.
Czochralski成長シリコンウエハ中の酸素析出物周辺における局所的格子歪の集束電子ビーム回折法による解析
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Author (3)：
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Material：
Volume：
38
Issue：
6A
Page：
3440-3447
Publication year：
Jun. 15, 1999
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors
Reference (15)：
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(1) Y. Tomokiyo, S. Matsumura, T. Okuyama, T. Yasunaga, N. Kuwano and K. Oki: Ultramicroscopy 54 (1994) 276.
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(2) Y. Wakayama, Y.Takahashi and S. Tanaka: Jpn. J. Appl. Phys. 36 (1997) 5072.
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(3) M. Tanaka, M. Terauchi and T. Kaneyama: Convergent Beam Electron Diffraction (JEOL, Maruzen, Tokyo, 1993).
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(4) K. Sueoka, N. Ikeda, T. Yamamoto and S. Kobayashi: J. Appl. Phys. 74 (1993) 5437.
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(5) T. Abe, M. Ogirima and K. Taniguchi: Silicon Crystal and Doping (Maruzen, Tokyo, 1986).
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