Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy.

HIRAMATSU K; DETCHPROHM T; AKASAKI I

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J-GLOBAL ID：200902143715518292 Reference number：93A0461975

Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy.

気相エピタクシーでサファイア上に成長させたGaNのヘテロ構造における熱応力の緩和機構

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Volume： 32 Issue： 4 Page： 1528-1533 Publication year： Apr. 1993
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Mechanical properties of solids in general

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