Art
J-GLOBAL ID：200902144280628674
Reference number：98A0527389
Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts.
Schottkyソース/ドレイン接触を使ったSOI MOSFETの漂遊体効果の低減
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Author (2)：
,
Material：
Volume：
37
Issue：
3B
Page：
1295-1299
Publication year：
Mar. 1998
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors
Reference (10)：
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1) SOI Kozo Keisei Gijutsu, ed. S. Furukawa (Sangyo Tosho, Tokyo, 1987) [in Japanese].
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2) J. P. Collinge: Silicon-on-Insulator Technology: Materials to VLSI (Kluwer Academic Publishers, 1991).
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3) K. Arita, M. Akamatsu and T. Asano: Jpn. J. Appl. Phys. 36 (1997) 1505
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4) K. Arita, M. Akamatsu and T. Asano: Ext. Abstr. 1997 Int. Conf. Solid State Devices and Materials, Hamamatsu, 1997 (Business Center for Academic Society of Japan, Tokyo, 1997) p. 146.
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5) T. Saraya, M. Takamiya, T. N. Duyet and T. Hiramoto: Ext. Abstr. 1997 Int. Conf. Solid State Devices and Materials, Hamamatsu, 1997 (Business Center for Academic Society of Japan, Tokyo, 1997) p. 554.
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