Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics.

NAMATSU H; HORIGUCHI S; NAGASE M; KURIHARA K

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J-GLOBAL ID：200902153519339768 Reference number：97A1011403

Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics.

シリコンの結晶方位を利用した一次元のナノ細線構造の作製とこれらのコンダクタンス特性

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Material：
Volume： 15 Issue： 5 Page： 1688-1696 Publication year： Sep. 1997
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices , Metal-insulator-semiconductor structures

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