Art

J-GLOBAL ID：200902163023851952   Reference number：01A0052274

Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on a Wafer by Controlling pH of Pretreatment Chemicals. Effect of Oxygen Adsorption.

前処理化学種のpHを制御してウエハ上に形成したNi/n-GaAsのSchottky障壁高さの二つのレベル 酸素吸着の効果

Author (6)： TSUZUKU T (Kanazawa Univ., Ishikawa, JPN) ,  SUGIMURA T (Kanazawa Univ., Ishikawa, JPN) ,  KASAI Y (Kanazawa Univ., Ishikawa, JPN) ,  INOKUMA T (Kanazawa Univ., Ishikawa, JPN) ,  IIYAMA K (Kanazawa Univ., Ishikawa, JPN) ,  TAKAMIYA S (Kanazawa Univ., Ishikawa, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 39  Issue： 10  Page： 5788-5793  Publication year： Oct. 15, 2000 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： pretreatment ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0052274&from=J-GLOBAL&jstjournalNo=G0520B") }}

JST classification (1)： Semiconductor-metal contacts  (BM03084G)

Reference (9)：

• 1) H. Hasegawa: Solid-State Electron. 41 (1997) 1441.
• 2) O. Sugino and B. D. Yu: Oyo Buturi 68 (1999) 1397 [in Japanese].
• 3) K. Hirose: Trans. IEICE C-II 82 (1999) 1 [in Japanese].
• 4) T. Ohmi: Ultraclean ULSI Gijutu (Baifukan, Tokyo, 1995) [in Japanese].
• 5) T. Sugimura, T. Tsuzuku, T. Katsui, Y. Kasai, T. Inokuma, S. Hashimoto, K. Iiyama and S. Takamiya: Solid-State Electron. 43 (1999) 1571.

Terms in the title (7)： 化学種 ,  pH ,  ウエハ ,  Ni ,  GaAs ,  Schottky障壁高さ ,  酸素吸着