High hole mobility in Si<sub>0.17</sub>Ge<sub>0.83</sub> channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition.

HOECK G; KOHN E; ROSENBLAD C; VON KAENEL H; HERZOG H-J; KOENIG U

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J-GLOBAL ID：200902163732647102 Reference number：00A0767973

High hole mobility in Si_0.17Ge_0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition.

プラズマ増強化学蒸着によって成長させたSi_0.17Ge_0.83チャネル金属-酸化物-半導体電界効果トランジスタの高い正孔移動度

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Author (6)： , , , , ,
Material：
Volume： 76 Issue： 26 Page： 3920-3922 Publication year： Jun. 26, 2000
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Transistors

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High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition.

High hole mobility in Si_0.17Ge_0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition.