Art
J-GLOBAL ID：200902163865602012
Reference number：01A0700033
Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100nm Regime.
100nmを切る領域での相補型金属酸化物半導体回路の性能に及ぼす歪Siチャネルの影響
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Author (3)：
,
,
Material：
Volume：
40
Issue：
4B
Page：
2627-2632
Publication year：
Apr. 30, 2001
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Transistors
, Oscillation circuits
Terms in the title (4)：
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,
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