0.15μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication.

NAKAJIMA K; YAMASHITA H; KOJIMA Y; HIRASAWA S; TAMURA T; YAMADA Y; TOKUNAGA K; EMA T; NOZUE H

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J-GLOBAL ID：200902167984536660 Reference number：98A0247947

0.15μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication.

Gビットのダイナミックランダムアクセスメモリの0.15μm電子ビームによる直接描画

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Material：
Volume： 36 Issue： 12B Page： 7535-7540 Publication year： Dec. 1997
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices , Semiconductor integrated circuit

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