Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation.

KOMURO S; MARUYAMA S; MORIKAWA T; ZHAO X; ISSHIKI H; AOYAGI Y

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J-GLOBAL ID：200902171771777652 Reference number：97A0160952

Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation.

レーザアブレーションで作ったエルビウムをドープしたシリコン薄膜の室温における発光

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Material：
Volume： 69 Issue： 25 Page： 3896-3898 Publication year： Dec. 16, 1996
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors

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