Art
J-GLOBAL ID：200902173148816402
Reference number：03A0011609
Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion.
無転位シリコンにおける置換型ニッケル原子分布の深準位過渡分光法と,拡散の解離機構に基づく理論解析による研究
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Author (3)：
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Material：
Volume：
41
Issue：
11A
Page：
6305-6309
Publication year：
Nov. 15, 2002
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Diffusion in solids in general
, Lattice defects in semiconductors
Terms in the title (11)：
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