Effect of O<sub>2</sub> gas partial pressure on mechanical properties of SiO<sub>2</sub> films deposited by radio frequency magnetron sputtering.

FUJIYAMA H; SUMOMOGI T; ENDO T

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J-GLOBAL ID：200902176284075016 Reference number：02A0322513

Effect of O₂ gas partial pressure on mechanical properties of SiO₂ films deposited by radio frequency magnetron sputtering.

高周波マグネトロンスパッタリングにより堆積したSiO₂膜の機械的性質に及ぼすO₂ガス分圧の効果

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Volume： 20 Issue： 2 Page： 356-361 Publication year： Mar. 2002
JST Material Number： C0789B ISSN： 0734-2101 CODEN： JVTAD6 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films , Mechanical properties of solids in general

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Effect of O2 gas partial pressure on mechanical properties of SiO2 films deposited by radio frequency magnetron sputtering.

Effect of O₂ gas partial pressure on mechanical properties of SiO₂ films deposited by radio frequency magnetron sputtering.