Art
J-GLOBAL ID：200902177859803384
Reference number：01A0982284
Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data.
エッチ速度及び診断データとの比較による二酸化けい素のC2F6及びCHF3エッチングのプラズマ化学のモデリング
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Author (4)：
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Material：
Volume：
19
Issue：
5
Page：
2344-2367
Publication year：
Sep. 2001
JST Material Number：
C0789B
ISSN：
0734-2101
CODEN：
JVTAD6
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Applications of plasma
, Manufacturing technology of solid-state devices
Substance index (2)：
Substance index
Chemical Substance indexed to the Article.
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