Art
J-GLOBAL ID：200902180883350502   Reference number：99A0297071

Advanced excimer-laser annealing process for quasi single-crystal silicon thin-film devices.

準単結晶シリコン薄膜素子用の新しいエキシマレーザアニーリングプロセス
Author (2)：
MATSUMURA M

About MATSUMURA M

(Tokyo Inst. Technol., Tokyo, JPN)

About Tokyo Inst. Technol., Tokyo, JPN

, 
OH C-H

About OH C-H

(Tokyo Inst. Technol., Tokyo, JPN)

About Tokyo Inst. Technol., Tokyo, JPN


Material：
Thin Solid Films

About Thin Solid Films


Volume： 337  Issue： 1/2  Page： 123-128  Publication year： Jan. 11, 1999 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 解説  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
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*thin film growth

About thin film growth

,...
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JST classification (3)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

,  Laser irradiation effects and damages 
(BK16040S)

About Laser irradiation effects and damages

,  Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

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単結晶シリコン

About 単結晶シリコン

, 
薄膜素子

About 薄膜素子


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