Substrate bias effects on low temperature polycrystalline silicon formation using electron cyclotron resonance SiH<sub>4</sub>/H<sub>2</sub> plasma.

NOZAWA R; TAKEDA H; ITO M; HORI M; GOTO T

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J-GLOBAL ID：200902181696335920 Reference number：97A0669607

Substrate bias effects on low temperature polycrystalline silicon formation using electron cyclotron resonance SiH₄/H₂ plasma.

電子サイクロトロン共鳴SiH₄/H₂プラズマを用いた低温多結晶シリコン形成における基板バイス効果

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Author (5)： , , , ,
Material：
Volume： 81 Issue： 12 Page： 8035-8039 Publication year： Jun. 15, 1997
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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Substrate bias effects on low temperature polycrystalline silicon formation using electron cyclotron resonance SiH4/H2 plasma.

Substrate bias effects on low temperature polycrystalline silicon formation using electron cyclotron resonance SiH₄/H₂ plasma.