Preparation of Pb(Zr,Ti)O<sub>3</sub> thin films by RF-magnetron sputtering with single stoichiometric target: Structural and electrical properties.

THOMAS R; MOCHIZUKI S; MIHARA T; ISHIDA T

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J-GLOBAL ID：200902181837638565 Reference number：02A0674206

Preparation of Pb(Zr,Ti)O₃ thin films by RF-magnetron sputtering with single stoichiometric target: Structural and electrical properties.

単一化学量論組成ターゲットを用いたRFマグネトロンスパッタリングによるPb(Zr,Ti)O₃薄膜の作製構造と電気的性質

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Volume： 413 Issue： 1/2 Page： 65-75 Publication year： Jun. 24, 2002
JST Material Number： B0899A ISSN： 0040-6090 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Oxide thin films , Ferroelectrics,antiferroelectrics and ferroelasticity

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Preparation of Pb(Zr,Ti)O3 thin films by RF-magnetron sputtering with single stoichiometric target: Structural and electrical properties.

Preparation of Pb(Zr,Ti)O₃ thin films by RF-magnetron sputtering with single stoichiometric target: Structural and electrical properties.