Art
J-GLOBAL ID：200902183811700532
Reference number：01A0772417
Realization of Cu(111) Single-Oriented State on SiO2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System.
Cu-Zr膜のアニーリングによるSiO2上のCu(111)単一配向状態の実現とCu-Zr/ZrN/Zr/Si接触系の熱安定性
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Author (5)：
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Material：
Volume：
40
Issue：
7
Page：
4661-4665
Publication year：
Jul. 15, 2001
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Metallic thin films
, Manufacturing technology of solid-state devices
Reference (17)：
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1) A. M. Brown and M. F. Ashby: Acta Metall. 28 (1980) 1085.
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2) C. W. Park and R. W. Vook: Appl. Phys. Lett. 59 (1991) 175.
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3) T. Nitta, T. Ohmi, S. Sakai, K. Sakaibara, S. Imai and T. Shibata: J. Electrochem. Soc. 140 (1993) 1131.
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4) C. Ryu, A. L. S. Loke, T. Nogami and S. Wong: Int. Reliability Physics Symp., Denver (IEEE, New York, 1997) p. 201.
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5) K. Abe, Y. Harada and H. Onoda: J. Vac. Sci. & Technol. B <B>17</B> (1999) 1464.
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Terms in the title (7)：
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