Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth(FACELO).

HIRAMATSU K; NISHIYAMA K; ONISHI M; MIZUTANI H; NARUKAWA M; MOTOGAITO A; MIYAKE H; IYECHIKA Y; MAEDA T

Art

J-GLOBAL ID：200902187584130096 Reference number：01A0271097

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth(FACELO).

ファセット制御エピタクシー横方向被覆成長(FACELO)を用いた低欠陥密度GaNの作製と特性評価

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Material：
Volume： 221 Page： 316-326 Publication year： Dec. 2000
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films

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