Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si2(CH3)6 Using Hall-Effect Measurements.

MATSUURA H; MASUDA Y; CHEN Y; NISHINO S

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J-GLOBAL ID：200902188445932885 Reference number：00A0912466

Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si₂(CH₃)₆ Using Hall-Effect Measurements.

Si₂(CH₃)₆から成長させた3C-SiCにおけるドナー密度とドナー準位のHall効果測定による決定

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Volume： 39 Issue： 9A Page： 5069-5075 Publication year： Sep. 15, 2000
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Lattice defects in semiconductors , Electronic structure of impurites and defects

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