In situ substrate preparation for high-quality SiC chemical vapour deposition.

HALLIN C; OWMAN F; MARTENSSON P; ELLISON A; KONSTANTINOV A; KORDINA O; JANZEN E

Art

J-GLOBAL ID：200902188719472428 Reference number：97A1021129

In situ substrate preparation for high-quality SiC chemical vapour deposition.

高品質のSiC化学蒸着に使うその場基板調製

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Material：
Volume： 181 Issue： 3 Page： 241-253 Publication year： Nov. 1997
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Crystal growth of semiconductors , Surface structure of semiconductors

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