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J-GLOBAL ID:200902188719472428   Reference number:97A1021129

In situ substrate preparation for high-quality SiC chemical vapour deposition.

高品質のSiC化学蒸着に使うその場基板調製
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Volume: 181  Issue:Page: 241-253  Publication year: Nov. 1997 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Crystal growth of semiconductors  ,  Surface structure of semiconductors 
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