Art
J-GLOBAL ID：200902190881905618
Reference number：02A0053103
MOCVD Growth of High-Quality InN Films and Raman Characterization of Residual Stress Effects.
高品質InN膜のMOCVD成長及び残留応力効果のRaman研究
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Author (4)：
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Material：
Volume：
228
Issue：
1
Page：
1-4
Publication year：
Nov. 01, 2001
JST Material Number：
C0599A
ISSN：
0370-1972
Document type：
Article
Article type：
原著論文
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films
Terms in the title (7)：
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