Art
J-GLOBAL ID：200902192893199762
Reference number：99A0661591
Reduction of dislocation density of HVPE-grown GaN on sapphire substrate by using facet-initiated epitaxial lateral overgrowth technique.
FIELO技術を用いたGaN結晶の低転位化
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Author (5)：
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Material：
Volume：
26
Issue：
2
Page：
25-26
Publication year：
Jul. 01, 1999
JST Material Number：
F0452B
ISSN：
0385-6275
Document type：
Article
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
Reference (6)：
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NAKAMURA, S. Proc. 2^<nd> Intern. Symp. on Blue Laser and Light Emitting Diodes, Chiba, Japan. 1998, 371
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UJIIE, Y. Jpn. J. Appl. Phys. 1989, 28, L337
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USUI, A. Jpn. J. Appl. Phys. 1997, 36, L899
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SAKAI, A. Appl. Phys. Lett. 1997, 71, 2259
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SAKAI, A. Appl. Phys. Lett. 1998, 73, 481
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