Research field (4)：
Inorganic materials
, Thin-film surfaces and interfaces
, Crystal engineering
, Applied materials
Research theme for competitive and other funds (26)：
2020 - 2024 Heterosynaptic platform functionalized by topological control of oxygen vacancy distribution in memristive devices
2021 - 2023 介在ニューロン機能を有する人工シナプスクロスバーアレイメモリスタの構築
2020 - 2023 Growth of a thick GaN crystal with extremely low resistivity by the OVPE method
2016 - 2021 総括班
2016 - 2021 Multiscale characterization of singularity structures and behaviors thereof
2017 - 2020 Synaptic platform for neuromorphic computing developed by functional defect engineering in memristive devices
2017 - 2019 Topological control of oxygen vacancy distribution in memristive materials for hypercomplex synaptic devices
2013 - 2016 Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
2013 - 2016 Four terminal memristor devices for correlation-based synaptic signal transduction
2012 - 2015 Investigation of mechanism of electrical conduction via functionalized dislocation networks in atomically-bonded metal-oxide crystals
2006 - 2009 Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system
2007 - 2008 Development of carrier separation technique by conductive atomic force microscopy
2006 - 2008 Creation of tensile-strained Ge high-mobility-channel by thermal nonequilibrium process
2004 - 2006 Controlling deformation of strained hetero structure of group IV semiconductors for realization of ultra uniform strain fields
2003 - 2005 Control of solid-phase reaction dynamics and carbon engineering for nanofabrication of group-IV
2001 - 2004 Development of direct observation technique of single electron trap and investigation of degradation mechanism of ultra-thin gate dielectric films
1999 - 2003 人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発
2000 - 2002 In situ transmission electron microscopy of degradation phenomena of Pb(Zrx Ti_<l-x>)O_3 thin films
2000 - 2002 Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSI
2001 - 2001 熱負荷プロセスにおける異種絶縁膜界面の構造遷移機構の原子レベル解析
電子顕微鏡による構造解析
半導体格子欠陥に関する研究
半導体薄膜成長に関する研究
Characterization of inorganic materials by electron microscopy
Study on defects in semiconductor materials
Study on semiconductor thin film growth
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Papers (575)：
Yudai Nakanishi, Yusuke Hayashi, Takeaki Hamachi, Tetsuya Tohei, Yoshikata Nakajima, Shiyu Xiao, Kanako Shojiki, Hideto Miyake, Akira Sakai. Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates. Journal of Electronic Materials. 2023
Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai. Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates. Scientific Reports. 2023. 13. 1
Kento Sato, Yusuke Hayashi, Naoki Masaoka, Tetsuya Tohei, Akira Sakai. High-temperature operation of gallium oxide memristors up to 600 K. Scientific Reports. 2023. 13. 1
Naoki Masaoka, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai. Interface engineering of amorphous gallium oxide crossbar array memristors for neuromorphic computing. Japanese Journal of Applied Physics. 2023. 62. SC. SC1035-SC1035
Taishi Ikeuchi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai. Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors. Applied Physics Express. 2023. 16. 1. 015509-015509
