J-GLOBAL ID:200901057542156384   Update date: Sep. 03, 2023

Sakai Akira

サカイ アキラ | Sakai Akira
Affiliation and department:
Job title: Professor
Research field  (4): Inorganic materials ,  Thin-film surfaces and interfaces ,  Crystal engineering ,  Applied materials
Research theme for competitive and other funds  (26):
  • 2020 - 2024 Heterosynaptic platform functionalized by topological control of oxygen vacancy distribution in memristive devices
  • 2021 - 2023 介在ニューロン機能を有する人工シナプスクロスバーアレイメモリスタの構築
  • 2020 - 2023 Growth of a thick GaN crystal with extremely low resistivity by the OVPE method
  • 2016 - 2021 総括班
  • 2016 - 2021 Multiscale characterization of singularity structures and behaviors thereof
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Papers (575):
  • Yudai Nakanishi, Yusuke Hayashi, Takeaki Hamachi, Tetsuya Tohei, Yoshikata Nakajima, Shiyu Xiao, Kanako Shojiki, Hideto Miyake, Akira Sakai. Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates. Journal of Electronic Materials. 2023
  • Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai. Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates. Scientific Reports. 2023. 13. 1
  • Kento Sato, Yusuke Hayashi, Naoki Masaoka, Tetsuya Tohei, Akira Sakai. High-temperature operation of gallium oxide memristors up to 600 K. Scientific Reports. 2023. 13. 1
  • Naoki Masaoka, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai. Interface engineering of amorphous gallium oxide crossbar array memristors for neuromorphic computing. Japanese Journal of Applied Physics. 2023. 62. SC. SC1035-SC1035
  • Taishi Ikeuchi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai. Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors. Applied Physics Express. 2023. 16. 1. 015509-015509
MISC (355):
  • 濱地威明, 藤平哲也, 林侑介, 宇佐美茂佳, 今西正幸, 森勇介, 隅谷和嗣, 今井康彦, 木村滋, 酒井朗. Analysis of local strain fields around individual threading dislocations in HVPE-GaN bulk crystals by using nanobeam X-Ray diffraction. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 山本望, 林侑介, 濱地威明, 中西悠太, 藤平哲也, 隅谷和嗣, 今井康彦, 木村滋, 正直花奈子, 三宅秀人, et al. Depth-resolved tomographic analysis on thick AlN films grown on NPSS using nanobeam X-ray diffraction. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 安達健太, 林侑介, 藤平哲也, 酒井朗. Gate-controlled modulation of synaptic properties in 4-terminal planar TiO2-x memristive devices. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 池内太志, 林侑介, 藤平哲也, 酒井朗. Development and resistive switching properties of four-terminal planer amorphous GaOx memristive devices. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 塩見春奈, 嶋田章宏, 藤平哲也, 林侑介, 金木奨太, 橋詰保, 今井康彦, 隅谷和嗣, 木村滋, 酒井朗. Operand analysis of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
Patents (43):
Works (5):
  • GaN結晶膜およびGaN系半導体素子(特許)
    1998 -
  • 半導体結晶の作製方法(特許)
    1996 -
  • (]G0048[)誘電率膜キャパシタ(特許)
    1995 -
  • アモルファスシリコン膜の形成方法(特許)
    1993 -
  • 半導体装置の製造方法(特許)
    1992 -
Professional career (1):
  • 博士(工学)
Awards (2):
  • 2003/03 - 財団法人大河内記念会 第49回(平成14年度)大河内賞記念賞 大容量DRAM用HSG-Siキャパシタの開発と実用化
  • 1999 - 応用物理学会賞A論文賞
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