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J-GLOBAL ID:200902132027893690   Reference number:97A0733203

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy.

水素化物気相エピタクシーによる低い転位密度を持つ厚いGaNのエピタキシャル成長
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Volume: 36  Issue: 7B  Page: L899-L902  Publication year: Jul. 15, 1997 
JST Material Number: F0599B  ISSN: 0021-4922  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor thin films 
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